Electro-Static discharge

Failure mechanisms , such as hot-carrier effect ( HCE ), dielectric breakdown , electro-static discharge ( ESD ) and electromigration , pose serious threat to the long-term reliability of VLSI circuits .

热载流子效应（HCE）、电介质击穿、静电放电，以及电迁移等失效机理，已经对VLSI电路的长期可靠性造成了极大的威胁。

With the rapid development of electron technology , the harm and potential menace of Electro-Static discharge ( ESD ) to electronic device and system become more serious and difficult to control .

随着电子、微电子应用技术的发展，静电放电对电子器件以及系统的伤害和潜在损伤变得日益严重和难以控制。

The interference caused by the traction power supply system on the railway signaling equipments mainly has three aspects : electro-static discharge interference , electromagnetic radiation and conductive interference .

拳引供电系统对铁路通信信号设备的干扰主要有三方面：静电干扰、电磁辐射和传导性干扰。

The theory of ESD ( Electro-Static Discharge ) equivalent circuit model is introduced in the paper . The electromagnetic fields generated by ESD are simulated by TLM in electromagnetic field .

阐述了静电放电的等效电路建模理论，采用基于传输线矩阵法的仿真软件对静电放电辐射场进行仿真研究。

A method to exact the electrical parameters and model the second breakdown action of MOSFET 's under ESD ( Electro-Static Discharge ) on circuit-level , using TCAD simulation , is presented .

采用一种利用TCAD仿真提取MOS器件在静电放电现象瞬间大电流情况下的电学参数，对MOS器件二次击穿行为进行电路级宏模块建模。

With the development of semiconductor manufacturing process , device feature size is scaled down constantly . ESD ( Electro-static Discharge ) has become one of the most important reliability issues in ICs ( Integrated Circuits ) .

随着半导体制造工艺的进步，器件的特征尺寸越来越小，静电放电（ESD，Electro-Staticdischarge）已经成为集成电路中最重要的可靠性问题之一。